Project Name:
Development of optoelectronic device integrated chip based on SnP2Se6
Project background:
With the development of science and technology, the integration of electronic devices and the integration of functions have become the direction of development. The integration of electronic function and photon function on the same chip to realize the electron-photon integration function is the current research hotspot. However, due to the limitation of material properties, the photonic chip integration urgently needs the support of new multi-functional materials.
Brief introduction of the project:
This project intends to research and develop a new two-dimensional material SnP2Se6 to realize the electron-photon integration of photonic chips by using its unique properties. The material has excellent nonlinear optical properties and photoelectric properties, and can realize many functions such as modulation and detection of optical signals on the same chip.
Project content:
1. Synthesis and characterization of SnP2Se6 materials Two-dimensional SnP2Se6 materials were synthesized by space-confined chemical vapor transfer method, and the structure and properties of the materials were studied by means of micro-Raman and X-ray irradiation.
2. Research on optical properties of SnP2Se6 The second harmonic generation performance of SnP2Se6 was tested and the influence of LAYER number on SHG was studied.
3. SnP2Se6 electrical characteristics test SnP2Se6 field effector was prepared and its mobility, response time and other indicators were tested.
4. SnP2Se6 photoelectric device preparation SnP2Se6 material is integrated on SiN photonic chip to prepare photoelectric integrated device of photonic chip.
5. Device integration test test the modulation conversion efficiency, responsiveness and other indicators of the photonic chip, and investigate the monolithic integration function.
Topic innovation:
1. Developed a new two-dimensional semiconductor material SnP2Se6 and systematically studied its properties for the first time.
2. The SnP2Se6 material is integrated on the photonic chip to realize the electron-photon integration and create a new idea of chip integration.
3. Using the unique optical properties of SnP2Se6, the photonic chip can simultaneously complete the modulation and detection of optical signals.
4. The multifunctional optoelectronic device on the integrated circuit platform is realized, providing a new strategy for the integration of integrated circuit functions in the future.
Research objectives:
By studying the properties of the new SnP2Se6 material, the integration of SNP2SE6 on SiN photonic chip is realized, and the optoelectronic integrated chip with multiple functions such as optical modulation and detection is developed. It provides new multifunctional platform materials and integration solutions for the development of electron-photon integrated circuits, and promotes the technological progress of chip function integration.
Such project design can let high school students contact the content of cutting-edge science and technology research, and cultivate the ability of scientific research. Under the guidance of teachers, students can complete subject research through literature research, theoretical contact, hands-on operation, etc., so as to achieve the purpose of learning scientific methods and improving innovation awareness.